The wafer-scale 2D semiconductor platform powering the next generation of AI chips

We enable foundries to scale advanced nodes beyond silicon for ultra-low-power compute.

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Beyond silicon

Next-generation AI infrastructure demands unprecedented transistor density without compromising energy efficiency.

As silicon approaches its scaling limit, foundries face a critical bottleneck:

The industry lacks the production tools to grow 2D materials on standard 12-inch wafers at commercially viable yields.

A 300 mm wafer fab production floor

North Star™

Purpose-built for
wafer-scale 2D TMD
growth.

North Star cold-wall CVD system with process chamber revealed

Our full-stack platform replaces legacy silicon channels with TMDs at the core of each transistor – atomically thin crystals that flawlessly conduct electricity at the sub-nanometer scale.

Precursor delivery lines glowing inside the North Star process chamber

Engineered Precursor Delivery

Precise vapor-phase delivery for stable chemistry and repeatable process windows.

Multi-channel showerhead heating during a growth cycle

Intermediate-Reaction Showerhead

Multi-channel thermal control enables uniform precursor reactions and wafer-scale distribution.

A 300 mm wafer on the North Star transfer stage

Foundry-Compatible Wafer Handling

Automated wafer transfer designed to integrate with industry-standard fab workflows.

North Star™

  1. Purpose-built for wafer-scale 2D TMD growth.

    Our full-stack platform replaces legacy silicon channels with TMDs at the core of each transistor – atomically thin crystals that flawlessly conduct electricity at the sub-nanometer scale.

  2. Engineered Precursor Delivery

    Precise vapor-phase delivery for stable chemistry and repeatable process windows.

  3. Intermediate-Reaction Showerhead

    Multi-channel thermal control enables uniform precursor reactions and wafer-scale distribution.

  4. Foundry-Compatible Wafer Handling

    Automated wafer transfer designed to integrate with industry-standard fab workflows.

North Star cold-wall CVD system with process chamber revealed
Precursor delivery lines glowing inside the North Star process chamber
Multi-channel showerhead heating during a growth cycle
A 300 mm wafer on the North Star transfer stage

Transistors built for the Angstrom era.

Up to

100×

Lower Defect Density

Eliminates micro-voids and interface flaws at atomic scales, unlocking the high manufacturing yields required for 300mm wafers.

Up to

75%

Less Switching Power

Delivers perfect gate control and low-leakage current, allowing AI chips to complete more compute operations with the same energy budget.

Over

2×

Smaller Gate Length

Reduces transistor channel length from using atomically thin 2D materials, enabling continued scaling beyond the sub-1 nm node.

AS FEATURED ON

TechCrunch
EE Times Asia
DCD
SiliconANGLE
Tech in Asia
e27
To change what’s possible, we have to question the limits we’ve accepted.

This belief continually drives Dr. Lance Li, Co-founder & Chief Scientist of Nexstrom, and one of the earliest pioneers of 2D material growth.

From being among the first to grow single-crystal MoS₂ since 2012, to leading corporate research at TSMC, Lance has spent his career pushing the boundaries of post-silicon electronics.

His deep expertise in materials science and atomic-layer chemistry, coupled with the team’s experiences in hardware design and semiconductor integration, anchors Nexstrom’s mission: To develop wafer-scale, CMOS-compatible 2D platforms for the next generation of computing.

For Nexstrom, the Angstrom Era isn’t a theory. It’s underway — and we are building the foundation to lead it.

Dr. Lance LiCo-founder & Chief Scientist, Nexstrom
Dr. Lance Li inspecting the growth chamber of Nexstrom’s CVD platform

Timeline

We’re moving fast.

  1. Investment

    Platform foundation

    • Founded by Lance Li and Xora Innovation
    • Validated proprietary wafer-scale TMD growth platform for high-quality 2D semiconductors
    • Established the core intellectual property and technology roadmap

  2. Build

    Lab to fab scaling

    • Advanced MOCVD platform from pilot to 100mm wafer scale
    • Expanded IP portfolio to cover TMD epitaxial growth, transfer processes, and device integration
    • Demonstrated reproducible wafer-scale growth with high uniformity and process stability

  3. Scale

    Commercial traction

    • Achieved commercial-grade TMD synthesis on 300mm wafers
    • Delivered wafer samples to industry partners within 18 months of launch
    • Raised US$15M in capital, including US$12M Seed round and US$3M non-dilutive funds
    • Established 7 active patent families including an issued US foundational patent
    • Expanded strategic collaborations with leading semiconductor manufacturers and research institutions

Team, Board & Advisors

Built with Semiconductor Industry Depth

Leadership

Board & Advisors

WE’RE HIRING

Build what comes next with us.

We are growing our team in Singapore across engineering, science and operations. Join us in building a post-silicon future.

See open roles

Technical Resources

Peer-reviewed results from material grown on Nexstrom systems