Reimagining materials.
Redefining computing.

We’re advancing the frontiers of semiconductor scaling with wafer-scale growth of single crystal 2D TMD materials — achieving high performance with ultra low power.

Discover our technology

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Next-gen materials for cutting-edge computing
Next-gen materials for cutting-edge computing

Next-gen materials for
cutting-edge computing.

As the silicon era nears its limits, Nexstrom is laying the foundation for what comes next, starting at the angstrom level. We’re pioneering a full-stack platform around sub-1nm 2D Transition Metal Dichalcogenides (TMDs) semiconductors — from materials to system — to power the next generation of AI-driven computing.

Our proprietary Metal-Organic Chemical Vapour Deposition (MOCVD) system delivers atomically-precise, low-defectivity 2D TMD films at 300mm wafer scale.

Advanced Performance

  • 100X carrier mobility at sub-1nm thickness.
  • 1-nm-class scaling beyond silicon’s physical limits, with single-crystal precision and ultra-low defect density.

Ultra-Low Power

  • 2X lower power consumption for advanced circuit operation.
  • >50% power efficiency gain over leading-edge silicon at the same node.

Monocrystalline<br />Wafer-Scale Integration

  • 300mm wafer-scale monocrystalline 2D films — an industry first.
  • 100% wafer coverage with high uniformity, using foundry-compatible tools and compliant chemistries.

Unlocking new
possibilities with
atomic precision.

Nexstrom technology
0 1 2 3 4 5 10⁰ 10¹ 10² 10³ body thickness [nm] mobility [cm²/V-s] WSe₂ MoS₂ Si (e⁺) Si (h⁺) 2D semiconductors Source: Nature 591, 43-53 (2021)

Nexstrom’s MOCVD system delivers the consistency, efficiency and scalability needed to integrate 2D materials into commercial semiconductor process flows.

As intelligent systems evolve, they demand higher-density, energy-efficient and ultra-small builds. Angstrom-scale transistors are the key to achieving this.

Leading the charge
into the Angstrom Era.

“To change what’s possible, we have to question the limits we’ve accepted.”

This belief continually drives Dr. Lance Li, Co-founder & Chief Scientist of Nexstrom, and one of the earliest pioneers of 2D material growth.

From being among the first to grow single-crystal MoS₂ since 2012, to leading corporate research at TSMC, Lance has spent his career pushing the boundaries of post-silicon electronics.

His deep expertise in materials science and atomic-layer chemistry, coupled with the team’s experiences in hardware design and semiconductor integration, anchors Nexstrom’s mission: To develop wafer-scale, CMOS-compatible 2D platforms for the next generation of computing.

For Nexstrom, the Angstrom Era isn’t a theory. It’s underway — and we are building the foundation to lead it.

Dr. Lance Li

Dr. Lance Li

Co-founder & Chief Scientist
Distinguished Professor,
National University of Singapore
National Research Foundation Professorship
Dr. Phoebe Tan

Dr. Phoebe Tan

Co-founder & CEO
Partner, Xora
Dr. Philip Wong

Dr. Philip Wong

Nexstrom Advisor
Inez Kerr Bell Professor,
Stanford University
Dr. Aaron Thean

Dr. Aaron Thean

Nexstrom Advisor
Deputy President
(Academic Affairs) & Provost,
National University of Singapore